PD - 97425
IRGP4069DPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP4069D-EPbF
Features
• Low VCE (ON) Trench IGBT Technology • Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution
• Lead Free Package
C
G E
n-channel
VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
6V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability
...