|
Part Number
|
DF2B6.8M2SC |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
ESD Protection Diodes |
|
Published
|
Mar 8, 2016 |
|
Detailed Description
|
ESD Protection Diodes Silicon Epitaxial Planar
DF2B6.8M2SC
DF2B6.8M2SC
1. Applications
• ESD Protection
Note: This pro...
|
|
Datasheet
|
DF2B6.8M2SC
|
Overview
ESD Protection Diodes Silicon Epitaxial Planar
DF2B6.
8M2SC
DF2B6.
8M2SC
1.
Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit
1: Pin 1 2: Pin 2
SC2
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
VESD
±8
kV
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/volt...
Similar Datasheet