STP3NA60 STP3NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE
STP3NA60 STP3NA60FI
VDSS
600 V 600 V
RDS(on)
4Ω 4Ω
ID
2.
9 A 2.
1 A
s TYPICAL RDS(on) = 3.
3 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING ...