|
Part Number
|
STB45N60DM2AG |
|
Manufacturer
|
STMicroelectronics |
|
Description
|
N-channel Power MOSFET |
|
Published
|
Mar 13, 2016 |
|
Detailed Description
|
STB45N60DM2AG
Datasheet
Automotive-grade N-channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a D²PAK package
T...
|
|
Datasheet
|
STB45N60DM2AG
|
Overview
STB45N60DM2AG
Datasheet
Automotive-grade N-channel 600 V, 85 mΩ typ.
, 34 A MDmesh DM2 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code STB45N60DM2AG
VDS @ TJ max.
650 V
RDS(on) max.
93 mΩ
ID 34 A
PTOT 250 W
• AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering ...
Similar Datasheet