STH6N95K5-2 N-channel 950 V, 1 Ω typ.
, 6 A MDmesh™ K5 Power MOSFET in a H²PAK-2 package Datasheet - production data Figure 1: Internal schematic diagram D(TAB) G(1) Features Order code VDS RDS(on) max.
ID PTOT STH6N95K5-2 950 V 1.
25 Ω 6 A 110 W  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior...

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