BFP740FESD
SiGe:C
NPN RF bipolar
transistor
Product description
The BFP740FESD is a wideband
NPN RF heterojunction bipolar
transistor (HBT) with an integrated ESD protection.
Feature list
• Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
• NFmin = 0.
6 dB at 2.
4 GHz and 0.
8 dB at 5.
5 GHz, 3 V, 6 mA • High gain Gms = 26 dB at 2.
4 GHz and Gma = 20.
5 dB at 5.
5 GHz, 3 V, 25 mA • OIP3 = 23.
5 dBm at 5.
5 GHz, 3 V, 25 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
• Wireless communications: WLAN, WiMax, UW...