BFP840FESD
Robust Low Noise Silicon Germanium Bipolar RF
Transistor
Data Sheet
Revision 1.
2, 2013-04-03
RF & Protection Devices
Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of ...