RQ3E100BN 　　Nch 30V 21A Power MOSFET VDSS RDS(on)(Max.
) ID PD 30V 10.
4mΩ ±21A 15W lFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline HSMT8 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 12 3000 Taping code TB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) E100BN Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Tc = 25°C Ta = 25°C ID*1 ID ±21 A ±10 A Pulsed drain current IDP*2 ±40 A Gate - Source voltage VG...

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