Part Number
|
BAV99C |
Manufacturer
|
KEC |
Description
|
SILICON EPITAXIAL PLANAR DIODE |
Published
|
Mar 21, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23(1).
MAXIMUM RATING...
|
Datasheet
|
BAV99C
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
VR 80
IF 100
IFSM
1
PD 225*
Tj 150
Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.
4 19.
05 1.
57mm)
UNIT V mA A mW
BAV99C
SILICON EPITAXIAL PLANAR DIODE
A G
D
C N K J
E L BL
23 1
M 1.
CATHODE 1 2.
ANODE 2 3.
ANODE 1 / CATHODE 2
DIM MILLIMETERS A 2.
90+_ 0.
1 B 1.
30+0.
20/-0.
15 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 G 1.
90 J 0.
10 K 0.
00 ~ 0.
10 L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10
...
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