2N5194G, 2N5195G
Silicon
PNP Power
Transistors
These devices are designed for use in power amplifier and switching circuits; excellent safe area limits.
Features
• Complement to
NPN 2N5191, 2N5192 • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage 2N5194G 2N5195G
VCEO
60 80
Vdc
Collector−Base Voltage 2N5194G 2N5195G
VCB Vdc 60
80
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VEB 5.
0 Vdc
IC 4.
0 Adc
IB 1.
0 Adc
PD 40 W 320 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to +150 °C/W
Stresses exceeding those listed in the M...