STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.
0028 Ω typ.
, 80 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max.
0.
0032 Ω ID 80 A PTOT 158 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and...

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