STAC9200
Datasheet
200 W, 32 V HF to 1.
3 GHz LDMOS
transistor in a STAC package
1 1
2 3
3
STAC780-4B
Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate
Features
Order code STAC9200
Frequency 860 MHz
VDD 32 V
POUT 200 W
Gain 16 dB
Efficiency 60 %
• Improved ruggedness: V(BR)DSS 80 V • Load mismatch 65:1 all phases at 200 W, 32 V, 860 MHz, PW 1ms, DC = 10% • POUT = 200 W min.
(230 W typ.
) with 16 dB gain at 860 MHz • In compliance with the 2002/95/EC European directive • ST air-cavity STAC packaging technology
Description
The STAC9200 is a common source N-channel enhancement-mode lateral fieldeffect RF power
transistor designed for broadband applications in the ...