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VS-19TQ015S-M3
Vishay Semiconductors
High Performance
Schottky Rectifier, 19 A
Base cathode
2
TO-263AB (D2PAK)
1 N/C
3 Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max.
TJ max.
Diode variation
EAS
TO-263AB (D2PAK) 19 A 15 V 0.
36 V
522 mA at 100 °C 125 °C
Single die 6.
75 mJ
FEATURES
• 125 °C TJ operation (VR 5 V) • Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Designed and qualifie...