HFT1N60F May 2015 HFT1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.
7 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested SOT-223 2 3 1 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol VDSS ID IDM VGS EAS IAR EAR PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (...

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