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Part Number
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HFI8N65U |
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Manufacturer
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SemiHow |
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Description
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N-Channel MOSFET |
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Published
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Mar 26, 2016 |
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Detailed Description
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HFW8N65U_HFI8N65U
HFW8N65U / HFI8N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
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Datasheet
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HFI8N65U
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Overview
HFW8N65U_HFI8N65U
HFW8N65U / HFI8N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
Jan 2013
BVDSS = 650 V RDS(on) typ ȍ ID = 7.
5 A
D2-PAK I2-PAK
HFW8N65U HFI8N65U 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)...
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