HRA56N08K HRA56N08K 80V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 110nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 4.
5 mΩ (Typ.
) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 80 V RDS(on) typ = 4.
5mΩ ID = 110 A TO-247 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (No...

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