HRD180N10K_HRU180N10K HRD180N10K / HRU180N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 85 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 15 mΩ (Typ.
) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A D-PAK I-PAK 2 1 3 HRD180N10K 1 2 3 HRU180N10K 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (N...

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