HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ.
) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ.
) @VGS=4.
5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25...

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