HRLF125N06K HRLF125N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 70 A  Unrivalled Gate Charge : 50 nC (Typ.
)  Lower RDS(ON) : 10 mΩ (Typ.
) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ.
) @VGS=4.
5V  100% Avalanche Tested December 2014 8DFN 5x6 1 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) Power Dissipation (TA = 25℃) Operating and Sto...

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