Part Number
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PYA28HC256 |
Manufacturer
|
PYRAMID |
Description
|
STATIC CMOS RAM |
Published
|
Mar 26, 2016 |
Detailed Description
|
FEATURES
Access Times of 70, 90 and 120ns Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS: ...
|
Datasheet
|
PYA28HC256
|
Overview
FEATURES
Access Times of 70, 90 and 120ns Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current
Fast Write Cycle Times
PYA28HC256
HIGH SPEED 32K x 8 EEPROM
Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years
Available in the following package: – 28-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28HC256 is a 5 Volt 32Kx8 EEPROM.
The device supports 64-byte page write operation.
The PYA28HC256 features DATA and Toggle Bit Polling as well as a system software scheme ...
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