Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
SP2700
Ver 1.
0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
210 @ VGS=10V 75V 2.
5A
250 @ VGS=4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D1 D1 D2 D2
PDFN 5x6
PIN1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TA=25°C TA=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERI...