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M2035S-E3, M2045S-E3
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AB
3 2 1
12
3 CASE
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
35 V, 45 V
IFSM VF at IF = 20 A
200 A 0.
55 V
TJ max.
150 °C
Package
TO-220AB
Diode variations
Single die
FEATURES • Trench MOS
Schottky technology • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS For use in low voltage, high frequency r...