Part Number
|
STP400N4F6 |
Manufacturer
|
STMicroelectronics |
Description
|
N-channel Power MOSFET |
Published
|
Mar 27, 2016 |
Detailed Description
|
STI400N4F6, STP400N4F6
Features
N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages...
|
Datasheet
|
STP400N4F6
|
Overview
STI400N4F6, STP400N4F6
Features
N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages
Datasheet − preliminary data
Order codes
STI400N4F6 STP400N4F6
VDSS 40 V
RDS(on) max
ID
1.
7 mΩ 120 A(1)
1.
Limited by package
■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
TAB
TAB
123
I²PAK
3 2 1
TO-220
Figure 1.
Internal schematic diagram
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3
!-V
Tab...
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