STW18N60DM2 N-channel 600 V, 0.
26 Ω typ.
, 12 A MDMesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) Features Order code STW18N60DM2 VDS 600 V RDS(on) max.
0.
295 Ω ID 12 A  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most deman...

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