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Part Number
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IRF7530PBF |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Mar 28, 2016 |
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Detailed Description
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PD - 95243
IRF7530PbF
l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l...
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Datasheet
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IRF7530PBF
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Overview
PD - 95243
IRF7530PbF
l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (1.
1mm) lAvailable in Tape & Reel l Lead-Free
S1 G1 S2 G2
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8™ package has half the footprint area of the standard SO-8.
This makes the Micro8 an ideal device for
app...
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