J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=800ᴕ3200.
(VCE=5.
0V, IC=300mA).
ᴌWide Area of Safe Operation.
ᴌLow Collector Saturation Voltage
: VCE(sat)=0.
17V (IC=500mA, IB=5.
0mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
8
Collector Current
IC 1.
0
Collector Power Dissipation
PC 500 PC * 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55ᴕ150
PC* : KTD1003 Mounted on Ceramic Substrate (250mm2x0.
8t)
UNIT V V V A mW W ᴱ ᴱ
KTD1003
EPITAXIAL PLANAR
NPN TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H ...