SEMICONDUCTOR
TECHNICAL DATA
KTD2854
EPITAXIAL PLANAR
NPN TRANSISTOR
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES High DC Current Gain : hFE=2000(Min.
) (VCE=2V, IC=1A) Low Saturation Voltage : VCE(sat)=1.
5V(Max.
) (IC=1A, IB=1mA) Complementary to KTB2234.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP IB PC Tj
Storage Temperature Range
Tstg
RATING 100 100 8 2 3 0.
5 1 150
-55 150
UNIT V V V
A
A W
BD
G JA R
P DEPTH:0.
2
C
Q K
FF
HH M...