PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT
TRANSISTOR
NP80N06CLD,NP80N06DLD,NP80N06ELD
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance
RDS(on)1 = 13 mΩ (MAX.
) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.
) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.
) • Built-in Gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N06CLD
TO-220AB
NP80N06DLD
TO-262
NP80N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
Gate to Source V...