MS75N75 75V N-Channel MOSFET Features • RDS(on) (Max 0.
017 Ω )@VGS=10V • Gate Charge (Typical 85nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (175°C) • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current –Pulsed VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Powe...

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