PH3135-5M
Radar Pulsed Power
Transistor 5W, 3.
1-3.
5 GHz, 100µs Pulse, 10% Duty
Features
•
NPN silicon microwave power
transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant
M/A-COM Products Released, 10 Jul 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO
IC PTOT TSTG
TJ
Rating
60 3.
0 0.
7 50 -65 to +20...