PRELIMINARY
CGHV35060MP
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility
transistor (HEMT) optimized for S Band performance.
The CGHV35060MP is suitable for typical bands of 2.
7-3.
1GHz and 3.
1-3.
5GHz while the input matched
transistor provides optimal gain, power and efficiency in a small 6.
5mm x 4.
4mm plastic surface mount (SMT) package.
The typical performance plots in the datasheet are derived with CGHV35060MP matched into a 3.
1-3.
5GHz high power amplifier.
PN: CGHV35060MP
Typical Performance Over 3.
1 - 3.
5 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.
1 GH...