CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplifier applications.
The datasheet specifications are based on a 0.
96 - 1.
4 GHz amplifier.
The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package.
Typical Performance 0.
96 - 1.
4 GHz (TC = 25˚C), 50 V
Parameter
0.
96 GHz
1.
1 GHz
1.
25 GHz
Gain @ PSAT Saturated Output Power
15.
6 29
15.
8 30
Drain Efficiency @ PSAT
62
74
Note: Measured CW in the CGHV40030-AMP a...