Part Number
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ACE3926E |
Manufacturer
|
ACE Technology |
Description
|
DUAL N-Channel MOSFET |
Published
|
Apr 1, 2016 |
Detailed Description
|
ACE3926E
Dual N-Channel 20-V MOSFET
Description The ACE3926E utilize a high cell density trench process to provide low r...
|
Datasheet
|
ACE3926E
|
Overview
ACE3926E
Dual N-Channel 20-V MOSFET
Description The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Applications
• Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b
TA=25℃ TA=70℃
Continuous ...
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