Target Specifications Datasheet RJF0408JPD 40V, 30A Silicon N Channel Thermal FET Power Switching R07DS1133EJ0100 Rev.
1.
00 Dec 12, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
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Features • Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built...

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