Part Number
|
RJF0604JPD |
Manufacturer
|
Renesas |
Description
|
N-Channel MOSFET |
Published
|
Apr 2, 2016 |
Detailed Description
|
Target Specifications Datasheet
RJF0604JPD
Silicon N Channel MOS FET Series Power Switching
R07DS0583EJ0200 Rev.2.00
A...
|
Datasheet
|
RJF0604JPD
|
Overview
Target Specifications Datasheet
RJF0604JPD
Silicon N Channel MOS FET Series Power Switching
R07DS0583EJ0200 Rev.
2.
00
Apr 13, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in th...
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