Target Specifications Datasheet RJF0605JPD Silicon N Channel MOS FET Series Power Switching R07DS0579EJ0300 Rev.3.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  Logic level operation (4 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in th...

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