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Part Number
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RU55200Q |
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Manufacturer
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Ruichips |
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Description
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N-Channel Advanced Power MOSFET |
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Published
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Apr 4, 2016 |
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Detailed Description
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RU55200Q
N-Channel Advanced Power MOSFET
Features
• 55V/200A,
RDS (ON) =3.3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance •...
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Datasheet
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RU55200Q
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Overview
RU55200Q
N-Channel Advanced Power MOSFET
Features
• 55V/200A,
RDS (ON) =3.
3mΩ(Typ.
)@VGS=10V
• Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Efficiency Synchronous Rectification in SMPS • High Speed Power Switching • Power Supply
Pin Description
G DS
TO247 D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP...
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