INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD750
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability
APPLICATIONS ·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
7V 15 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
30 A 100 W 150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc website：www.
iscsemi.
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INCHANGE Semiconduct...