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Part Number
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SSG4N10E |
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Manufacturer
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SeCoS |
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Description
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Dual-N Enhancement Mode Power MOSFET |
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Published
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Apr 4, 2016 |
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Detailed Description
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Elektronische Bauelemente
SSG4N10E
4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product...
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Datasheet
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SSG4N10E
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Overview
Elektronische Bauelemente
SSG4N10E
4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
FEATURES
Low on-resistance Simple Drive Requirement Double-N MosFET Package
SOP-8
LD M
AC
N
JK
HG B
FE
MARKING CODE
4N10ESS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size 13’ inch
Dimensions in millimeters
REF.
A B C D E F G
Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00
0° 8° 0.
40 0.
90 0.
19 0.
25
1.
27 TYP.
REF.
H J K L M N
...
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