Part Number
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DMN1032UCB4 |
Manufacturer
|
Diodes |
Description
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N-CHANNEL MOSFET |
Published
|
Apr 5, 2016 |
Detailed Description
|
ADVANCED INFORMATION
PART OBSOLETE - CONTACT US
DMN1032UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
VDSS ...
|
Datasheet
|
DMN1032UCB4
|
Overview
ADVANCED INFORMATION
PART OBSOLETE - CONTACT US
DMN1032UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
VDSS 12V
RDS(ON) 18mΩ
Qg 3.
2nC
Qgd 0.
3nC
ID 4.
8A
Typ.
@ VGS = 4.
5V, TA = +25°C
Description
This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.
It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
Applications
DC-DC converters Battery management Load switches
Features
LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.
2nC for U...
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