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Part Number
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DMN2011UFDE |
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Manufacturer
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Diodes |
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Description
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N-Channel MOSFET |
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Published
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Apr 5, 2016 |
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Detailed Description
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ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON
Product Summary
V(BR)DSS 20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V
...
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Datasheet
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DMN2011UFDE
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Overview
ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON
Product Summary
V(BR)DSS 20V
RDS(ON) max
9.
5mΩ @ VGS = 4.
5V 11mΩ @ VGS = 2.
5V
ID max TA = +25°C
11.
7A
10.
8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
• General Purpose Interfacing Switch • Power Management Functions
U-DFN2020-6
DMN2011UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• 0.
6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gate Threshold Voltage • Low On-Resistance • ESD Protected Gate • Totally Lead-Free & Fully RoHS Com...
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