Part Number
|
HU60N03 |
Manufacturer
|
HAOLIN |
Description
|
30V N-Channel MOSFET |
Published
|
Apr 6, 2016 |
Detailed Description
|
HD60N03_HU60N03
Nov 2009
HD60N03 / HU60N03
30V N-Channel MOSFET
BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A
FEATURES
Orig...
|
Datasheet
|
HU60N03
|
Overview
HD60N03_HU60N03
Nov 2009
HD60N03 / HU60N03
30V N-Channel MOSFET
BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 9mΩ (Typ.
) @V GS=10V 100% Avalanche Tested
TO-252 TO-251
HD60N03
HU60N03
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuou...
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