RoHS
MBT6517LT1
NPN EPITAXIAL SILICON
TRANSISTOR
HIGH VOLTAGE
TRANSISTOR
* Collector Dissipation: Pc=225mW(Ta=25 )
* Collector-Emitter Voltage :Vceo=350V
ABSOLUTE MAXIMUM RATINGS at Ta=25
DCharacteristic
Symbol Rating
Collector-Base Voltage
Vcbo
350
TCollector-Emitter Voltage
Vceo
350
.
,LEmitter-Base Voltage
Collector Current Base Current
Vebo Ic Ib
6 500 250
Collector Dissipation Ta=25 *
PD 225
OJunction Temperature
Storage Temperature
Tj 150 Tstg -55-150
2.
9 1 .
9 0.
95 0.
95 0.
4
V V V mA mA
mW
1.
2.
4 1.
3
1.
BASE 2.
EMITTER 3.
COLLECTOR
Unit:mm
CELECTRICAL CHARACTERISTICS at Ta=25
ICCharacteristic
Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Volta...