DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 11.
5mΩ @ VGS = 4.
5V 14mΩ @ VGS = 2.
5V ID max TA = +25°C 10 A 9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications  General Purpose Interfacing Switch  Power Management Functions Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3) ...

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