ADVANCE INFORMATION DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.
4Ω @ VGS = 4.
5V 0.
5 Ω @ VGS = 2.
5V 0.
7 Ω @ VGS = 1.
8V ID TA = +25°C 1.
5A 1.
3A 1.
1A Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage VGS(TH), 1.
0V Max.
 Low Input Capacitance  Fast Switching Speed  Ultra-Small Surfaced Mount Package  Ultra-Low Package Profile, 0.
4mm Maximum Package Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET is designed to minimiz...

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