Part Number
|
DMN3010LFG |
Manufacturer
|
Diodes |
Description
|
N-Channel MOSFET |
Published
|
Apr 8, 2016 |
Detailed Description
|
NEW PRODUCT
DMN3010LFG
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON)
8.5mΩ @ VGS =...
|
Datasheet
|
DMN3010LFG
|
Overview
NEW PRODUCT
DMN3010LFG
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON)
8.
5mΩ @ VGS = 10V 10.
5mΩ @ VGS = 4.
5V
ID TC = +25°C
30A
25A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
• Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher
density end products • Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product • 100% UIS (Avalanche) rated • 100% Rg tested • Totally Lead-Free & Fully RoHS Complia...
Similar Datasheet