Part Number
|
HCU6N70S |
Manufacturer
|
SemiHow |
Description
|
700V N-Channel Super Junction MOSFET |
Published
|
Apr 8, 2016 |
Detailed Description
|
HCD6N70S_HCU6N70S
June 2015
HCD6N70S / HCU6N70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design...
|
Datasheet
|
HCU6N70S
|
Overview
HCD6N70S_HCU6N70S
June 2015
HCD6N70S / HCU6N70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
BVDSS = 700 V RDS(on) typ ȍ ID = 3.
0 A
D-PAK I-PAK
2
1 3
HCD6N70S
1
2 3
HCU6N70S
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Curr...
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