RoHS BC847S
Multi-Chip
TRANSISTOR (
NPN)
SOT-363
FEATURES Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector current
.
,LICM : 200 mA
Collector-base voltage
V(BR)CBO : 50
V
Operating and storage junction temperature range
OTJ,Tstg: -55℃to +150℃ CMARKING: 1C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TDC current gain CCollector-emitter saturation voltage LEBase-emitter voltage ETransition frequency WEJCollector output capacitance
Symbol Test conditions
V(BR)CBO Ic=10µA,IE=0 V(BR)CEO Ic=10mA,IB=0 V(BR)EBO IE=10µA,IC=0
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