RoHS
BCX20LT1
NPN EPITAXIAL SILICON
TRANSISTOR
GENERAL PURPOSE
TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Unit
Collector-Base Voltage
Vcbo
30
V
Collector-Emitter Voltage
Vceo
25
V
Emitter-Base Voltage
Vebo
5.
0
V
Collector Current
Ic 500
mA
Total Device Dissipation FR-5 Board(1) Ta=25
PD 225
mw
Derate above 25
1.
8 mW/
Total Device Dissipation Alumina Substrate,(2) Ta=25 Derate above 25 Junction Temperature
ICStorage Temperature
PD 300
2.
4 Tj 150 Tstg -55-150
mw mW/
NELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit
OCollector-Base Voltage
V(BR)ceo 25
V
Collector-Emitter Voltage
V(BR)ces 30
V
REmitt...