H5N6001P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1118-0300 (Previous: ADE-208-1425A) Rev.
3.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
3.
00 Sep 07, 2005 page 1 of 6 H5N6001P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1...

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